FDMT800152DC datasheet, mosfet equivalent, ON Semiconductor

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 532.38KB)

Features and benefits

* Max RDS(on) = 9.0 mW at VGS = 10 V, ID = 13 A
* Max RDS(on) = 11.5 mW at VGS = 6 V, ID = 11 A
* Advanced Package and Silicon Combination for Low RDS(on) and.

Application

* OringFET / Load Switching
* Synchronous Rectification
* DC−DC Conversion Pin 1 Pin 1 G S S S S D D D D.

Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extreme.

Image gallery